文献类型：期刊文献

英文题名：Sputtered and selenized Sb2Se3 thin-film solar cells with open-circuit voltage exceeding 500 mV

作者：Liang, Guang-Xing Luo, Yan-Di Chen, Shuo Tang, Rong Zheng, Zhuang-Hao Li, Xue-Jin Liu, Xin-Sheng Liu, Yi-Ke Li, Ying-Fen Chen, Xing-Ye Su, Zheng-Hua Zhang, Xiang-Hua Ma, Hong-Li Fan, Ping

第一作者：Liang, Guang-Xing

通信作者：Chen, S[1];Chen, XY[1];Fan, P[1]

机构：[1]Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Adv Thin Films & Applicat, Shenzhen 518060, Peoples R China;[2]Chinese Univ Hong Kong Shenzhen, Sch Sci & Engn, Shenzhen 518060, Peoples R China;[3]Henan Univ, Minist Educ, Key Lab Special Funct Mat, Kaifeng 475004, Peoples R China;[4]Guizhou Inst Technol, Sch Mat & Met Engn, Guiyang 550003, Peoples R China;[5]Univ Rennes, CNRS, ISCR Inst Sci Chim Rennes, UMR 6226, F-35000 Rennes, France

第一机构：Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Adv Thin Films & Applicat, Shenzhen 518060, Peoples R China

通信机构：corresponding author), Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Adv Thin Films & Applicat, Shenzhen 518060, Peoples R China.

年份：2020

卷号：73

外文期刊名：NANO ENERGY

收录：;WOS:【SCI-EXPANDED(收录号:WOS:000560077100010)】；

基金：This work was supported by Key Project of Department of Education of Guangdong Province (No. 2018KZDXM059) China, Science and Technology plan project of Shenzhen (JCYJ20190808153409238) China, Natural Science Foundation of Guangdong Province (2020A1515010805) China, National Natural Science Foundation of China (No. 61404086, U1813207, 51802050, U1804160) China, The Natural Science Foundation of Guizhou Province (Qian Ke He [2017] 1064) China, The postgraduate innovation development fund project of Shenzhen University (PIDFP-ZR2019019) China, Shenzhen Key Lab Fund (ZDSYS 20170228105421966) China. The authors wish to acknowledge the assistance on HAADF-STEM observation received from the Electron Microscope Center of the Shenzhen University.

语种：英文

外文关键词：Sb2Se3 solar Cell; Open-circuit voltage; Sputtering; Selenization; Elemental inter-diffusion

摘要：Antimony selenide (Sb2Se3) is a potential absorber material for environment-friendly and cost-efficient photovoltaics and has achieved considerable progress in recent years. However, the severe open-circuit voltage (V-oc) deficit ascribed to the interface and/or bulk defect states has become the main obstacle for further efficiency improvement. In this work, Sb2Se3 absorber layer was prepared by an effective combination reaction involving sputtered and selenized Sb precursor thin films. The self-assembled growth of Sb2Se3 thin films with large crystal grains, benign preferential orientation, and accurate chemical composition were successfully fulfilled under an appropriate thickness of Sb precursor and an optimized selenization scenario. Substrate structured Sb2Se3 thin-film solar cells, a champion device with a power-conversion efficiency of 6.84%, were fabricated. This device is comparable to state-of-the-art ones and represents the highest efficiency of sputtered Sb2Se3 solar cells. Importantly, the high V-oc of 504 mV is closely related to the reduced deep level defect density for the Sb2Se3 absorber layer, the passivated interfacial defects for Sb2Se3/CdS heterojunction interface, and the additional heterojunction heat treatment-induced Cd and S inter-diffusion. This significantly improved Voc demonstrates remarkable potential to broaden its scope of applications for Sb2Se3 solar cells.