文献类型：期刊文献

英文题名：Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory

作者：Zhou, Guangdong Xiao, Lihua Zhang, Shuangju Wu, Bo Liu, Xiaoqin Zhou, Ankun

第一作者：Zhou, Guangdong

通信作者：Zhou, Guangdong|[144408626c3cbb0d02ee5]周广东;[14440ce882a616879f54e]周广东;

机构：[1] Guizhou Institute of Technology, Guizhou, 550003, China; [2] Institute for Clean Energy & Advanced Materials [ICEAM], Southwest University, Chongqing, 400715, China; [3] Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy, Chongqing, 400715, China; [4] Institute of Theoretical Physics, Zunyi Normal College, Zunyi, 563002, China; [5] China Kunming Institute of Botany, Chinese Academy Science, Kunming, 650201, China

第一机构：贵州理工学院

通信机构：Guizhou Institute of Technology, Guizhou, 550003, China|贵州理工学院;

年份：2017

卷号：722

起止页码：753-759

外文期刊名：Journal of Alloys and Compounds

收录：EI(收录号：20172503809202);Scopus(收录号：2-s2.0-85020924479)

语种：英文

外文关键词：Tin oxides - Random access storage - Silver - Nanocomposites - Switching

摘要：Bilayer of NiOx/TiO2 thin film spin-coated and sputtering-deposited on the fluorine doped tin oxide (FTO) substrate is employed to develop a resistive random access memory device. An enhanced resistive switching (RS) behavior, which with appropriate resistance ratio of ～103, switching cycle endurance for 102 and long retention time for 104 s, is observed in the bilayer NiOx/TiO2 based device. Construction of contact-potential barrier, formation and rupture of a localized conduction filaments and migration of oxygen vacancy existed in the interface near electrodes co-contribute to the enhanced RS memory effects, but the migration of Ag+, Ni2x+ and diffusion of oxygen vacancies are the dominated ones. This work might give an insight into the mechanism of RS memory behaviors of an oxide-stacked structure device. ? 2017