文献类型：期刊文献

英文题名：Spark plasma sintering of Sb2Se3 sputtering target towards highly efficient thin film solar cells

作者：Liang, Guangxing Chen, Xingye Tang, Rong Liu, Yike Li, Yingfen Luo, Ping Su, Zhenghua Zhang, Xianghua Fan, Ping Chen, Shuo

第一作者：Liang, Guangxing

通信作者：Chen, Shuo

机构：[1] Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China; [2] School of Material and Metallurgical Engineering, Guizhou Institute of Technology, Guiyang, 550003, China; [3] Univ Rennes, CNRS, ISCR [Institut des Sciences Chimiques de Rennes], UMR 6226, Rennes, F-35000, France

第一机构：Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China

通信机构：Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China

年份：2020

卷号：211

外文期刊名：Solar Energy Materials and Solar Cells

收录：EI(收录号：20201308353938);Scopus(收录号：2-s2.0-85082166870)

语种：英文

外文关键词：Antimony compounds - Thin films - Heterojunctions - Magnetron sputtering - Spark plasma sintering - Film preparation - Ball milling - Solar power generation

摘要：Antimony selenide (Sb2Se3) is a potential absorber material for environment-friendly and cost-efficiently photovoltaics due to its material advantages and superior optoelectronic properties. In this work, we proposed a facile and versatile method of ball milling followed with spark plasma sintering (SPS) to prepare high-quality Sb2Se3 sputtering target. Then the highly crystalline Sb2Se3 thin film consisted of large crystal grains can be prepared by using radio frequency (RF) magnetron sputtering with an additional post-selenization heat treatment. An efficient substrate structured Sb2Se3 thin film solar cell with configuration of Mo/Sb2Se3/CdS/ITO/Ag was fabricated and a champion device with highly interesting power conversion efficiency (PCE) of 5.08% has been achieved. Superior device performances are closely related to the Sb2Se3 absorber layer with benign growth orientation and the Sb2Se3/CdS heterojunction interface with smooth contact, which induced less recombination loss. The combined features of homemade sputtering target and advantageous thin film preparation technology further demonstrated its attractive application potential in thin film photovoltaic scenarios. ? 2020 Elsevier B.V.