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Self-selective analogue FeOx-based memristor induced by the electron transport in the defect energy level  ( SCI-EXPANDED收录)   被引量:11

文献类型:期刊文献

英文题名:Self-selective analogue FeOx-based memristor induced by the electron transport in the defect energy level

作者:Liao, Changrong Hu, Xiaofang Liu, Xiaoqin Sun, Bai Zhou, Guangdong

第一作者:Liao, Changrong

通信作者:Zhou, GD[1];Sun, B[2]

机构:[1]Chongqing Univ Arts & Sci, Sch Elect Informat & Elect Engn, Chongqing 402160, Peoples R China;[2]Southwest Univ, Coll Artificial Intelligence, Chongqing 400715, Peoples R China;[3]Guizhou Inst Technol, Sch Sci, Guiyang 550003, Peoples R China;[4]Univ Waterloo, Dept Mech & Mechatron Engn, Waterloo, ON, Canada

第一机构:Chongqing Univ Arts & Sci, Sch Elect Informat & Elect Engn, Chongqing 402160, Peoples R China

通信机构:corresponding author), Southwest Univ, Coll Artificial Intelligence, Chongqing 400715, Peoples R China;corresponding author), Univ Waterloo, Dept Mech & Mechatron Engn, Waterloo, ON, Canada.

年份:2022

卷号:121

期号:12

外文期刊名:APPLIED PHYSICS LETTERS

收录:;WOS:【SCI-EXPANDED(收录号:WOS:000860333400002)】;

基金:This work was supported by the Fundamental Research Funds for the Central Universities (Grant No. SWU020019), the Natural Science Foundation of Chongqing (Grant No. cstc2020jcyj-msxm X0648), and the Natural Science Foundation of Guizhou Province (Grant No. [2020]1Y024).

语种:英文

外文关键词:Electron transport properties - Electron tunneling - Hematite

摘要:A Fe2O3 film homojunction was orderly prepared by magnetron sputtering and a hydrothermal method. The Fe2O3 homojunction-based memristor exhibits an obvious self-selective effect as well as a typical analogue resistive switching (RS) memory behavior. A desirable self-rectifying voltage range (-1 to 1 V), stable resistance ratio, good cycling endurance (> 10(4) cycles), and long retention time (> 10(4) s) can be obtained from the Fe2O3 homojunction-based memristor. Oxygen vacancies (V-o) are inevitably generated during the growth of the Fe2O3 film. The self-selective analogue RS memory behavior is ascribed to the electron tunneling behavior between the potential barrier generated by the FeOx contact and the electron filling dynamic in the V-o-based traps. This work provides a simple method to prepare a self-selective analogue memristor and lays the foundation for the core device of neuromorphic computing.

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