文献类型：期刊文献

英文题名：Cadmium-Free Kesterite Thin-Film Solar Cells with High Efficiency Approaching 12%

作者：Ahmad, Nafees Zhao, Yunhai Ye, Fan Zhao, Jun Chen, Shuo Zheng, Zhuanghao Fan, Ping Yan, Chang Li, Yingfen Su, Zhenghua Zhang, Xianghua Liang, Guangxing

第一作者：Ahmad, Nafees

通信作者：Ye, F[1];Liang, GX[1]

机构：[1]Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Adv Thin Films & Applicat, Key Lab Optoelect Devices & Syst, Shenzhen 518060, Peoples R China;[2]Univ Rennes, ISCR Inst Sci Chim Rennes, CNRS, UMR 6226, F-35000 Rennes, France;[3]Hong Kong Univ Sci & Technol Guangzhou, Jiangmen Lab Carbon Sci & Technol, Sustainable Energy & Environm Thrust, Guangzhou 510000, Peoples R China;[4]Guizhou Inst Technol, Coll Mat & Energy Engn, Guiyang 550003, Peoples R China

第一机构：Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Adv Thin Films & Applicat, Key Lab Optoelect Devices & Syst, Shenzhen 518060, Peoples R China

通信机构：corresponding author), Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Adv Thin Films & Applicat, Key Lab Optoelect Devices & Syst, Shenzhen 518060, Peoples R China.

年份：2023

外文期刊名：ADVANCED SCIENCE

收录：;EI(收录号：20232714341271);Scopus(收录号：2-s2.0-85163785417);WOS:【SCI-EXPANDED(收录号:WOS:001020124100001)】；

基金：& nbsp;N.A. and Y.Z. contributed equally to this work. This work was supported by the National Natural Science Foundation of China (62074102 and 62204067) China, the Science and Technology Plan Project of Shenzhen (20220808165025003) China. Guangdong Basic and Applied Basic Research Foundation (2022A1515010979) China. The authors wish to acknowledge the assistance on (TEM/STEM/FIB) received from the Electron Microscope Center of Shenzhen University.

语种：英文

外文关键词：atomic layer deposition; buffer layers; cadmium-free solar cells; efficiency; kesterite

摘要：Cadmium sulfide (CdS) buffer layer is commonly used in Kesterite Cu2ZnSn(S,Se)(4) (CZTSSe) thin film solar cells. However, the toxicity of Cadmium (Cd) and perilous waste, which is generated during the deposition process (chemical bath deposition), and the narrow bandgap (& AP;2.4 eV) of CdS restrict its large-scale future application. Herein, the atomic layer deposition (ALD) method is proposed to deposit zinc-tin-oxide (ZTO) as a buffer layer in Ag-doped CZTSSe solar cells. It is found that the ZTO buffer layer improves the band alignment at the Ag-CZTSSe/ZTO heterojunction interface. The smaller contact potential difference of the ZTO facilitates the extraction of charge carriers and promotes carrier transport. The better p-n junction quality helps to improve the open-circuit voltage (V-OC) and fill factor (FF). Meanwhile, the wider bandgap of ZTO assists to transfer more photons to the CZTSSe absorber, and more photocarriers are generated thus improving short-circuit current density (Jsc). Ultimately, Ag-CZTSSe/ZTO device with 10 nm thick ZTO layer and 5:1 (Zn:Sn) ratio, Sn/(Sn + Zn): 0.28 deliver a superior power conversion efficiency (PCE) of 11.8%. As far as it is known that 11.8% is the highest efficiency among Cd-free kesterite thin film solar cells.