文献类型：期刊文献

英文题名：Titanium Removal from Metallurgical-Grade Silicon Melts Using High-Basicity Index Slag and Carbon Dioxide Injection

作者：Long, Xiao Luo, Wenbo Lv, Jun Chen, Falou Li, Xiang Long, Shaolei

第一作者：龙行

通信作者：Long, X[1];Luo, WB[1]

机构：[1]Guizhou Inst Technol, Sch Mat & Energy Engn, Guiyang 550003, Peoples R China;[2]Mangshi Yonglong Ferroalloy Co Ltd, Mangshi 678400, Peoples R China;[3]Yunnan Longling Cty Longshan Silicon Co Ltd, Baoshan 678300, Peoples R China

第一机构：贵州理工学院

通信机构：corresponding author), Guizhou Inst Technol, Sch Mat & Energy Engn, Guiyang 550003, Peoples R China.|贵州理工学院;

年份：2022

卷号：12

期号：6

外文期刊名：METALS

收录：;Scopus(收录号：2-s2.0-85132004712);WOS:【SCI-EXPANDED(收录号:WOS:000817399300001)】；

基金：This research was funded by the National Natural Science Foundation of China (51904083), the Growth Project of Young Scientific and Technological Talents in Universities of Guizhou Province [Qian Jiao He KY Zi (2021)262], and the Guizhou Institute of Technology high-level talents research launch project [XJGC20190963].

语种：英文

外文关键词：high-basicity index slag; metallurgical-grade silicon; refining; Ti removal; carbon dioxide

摘要：In this study, novel slags with a high basicity index were used to refine silicon melts with carbon dioxide injection to effectively remove Ti from metallurgical-grade silicon. Different compositions of the initial slag were used, and silicon samples were obtained during the refining. The results indicate that the Ti-removal rate initially increased with an increase in the basicity index, and it decreased after the basicity index exceeded 1.4. During the refining, silicon emulsification was observed at the slag-silicon interface, which was restricted by the increased basicity index of slags. Impurities that were concentrated in silicon droplets near the slag-silicon interfaces were oxidized, wetted by slags, and transferred to the slag phase. After 15 min of refining, up to 59 wt% of Ti in silicon could be removed and the Ti-concentrating phase in the slag contained 2.05 wt% of Ti. The results of this study provide a reference for low-cost Ti removal from metallurgical-grade silicon using a refining method.