文献类型：期刊文献

英文题名：Bipolar resistive switching memory behaviors of the micro-size composite particles

作者：Zhou, Guangdong Sun, Bai Liu, Xiaoqing Wu, Bo Zhang, Shuangju Zhou, Ankun

第一作者：Zhou, Guangdong

通信作者：Zhou, GD[1];Zhou, AK[2]

机构：[1]Guizhou Inst Technol, Guiyang 550003, Guizhou, Peoples R China;[2]Southwest Univ, Inst Clean Energy & Adv Mat, Chongqing 400715, Peoples R China;[3]Chongqing Key Lab Adv Mat & Technol Clean Energy, Chongqing 400715, Peoples R China;[4]Southwest Jiaotong Univ, Sch Phys Sci & Technol, Chengdu 610031, Sichuan, Peoples R China;[5]Zunyi Normal Coll, Inst Theoret Phys, Zunyi 563002, Peoples R China;[6]Chinese Acad Sci, KunMing Inst Bot, Kunming 650201, Peoples R China

第一机构：贵州理工学院

通信机构：corresponding author), Guizhou Inst Technol, Guiyang 550003, Guizhou, Peoples R China;corresponding author), Chinese Acad Sci, KunMing Inst Bot, Kunming 650201, Peoples R China.|贵州理工学院;

年份：2017

卷号：166

起止页码：177-183

外文期刊名：COMPOSITE STRUCTURES

收录：;EI(收录号：20170703354793);Scopus(收录号：2-s2.0-85012267334);WOS:【SCI-EXPANDED(收录号:WOS:000395954300019)】；

基金：This work was supported by the National Natural Science Foundation of China (11304410).

语种：英文

外文关键词：Resistive switching memory; Silicates composite particles; Visible light-controlled

摘要：Composite particles (CPs) with an average diameter of 100 gm, containing the amorphous silicates, but crystal structures are dominated by the NaS2, Al2S3, Al0.55Mo2S4 and MoO3, are synthesized using hydrothermal method. Bipolar resistive switching (RS) memory behaviors with favorable resistance ON/OFF ratio, high retention and voltage cycling endurance performance are observed in the CPs-based device. The RS memory behaviors can be well controlled by stressing visible light at room temperature. The traps/deep traps based physical modes are proposed to interpret the RS memory behaviors for the quasi-bulk silicate-based composites. Different from conventional nano-scale RS memory device, the discovery of the RS memory behavior of micro-scale silicate composites may provide one new insight into the mechanism of resistive switching behavior. (C) 2017 Published by Elsevier Ltd.