文献类型：期刊文献

英文题名：Potassium doping for grain boundary passivation and defect suppression enables highly-efficient kesterite solar cells

作者：Li, Yingfen Wang, Zhiqi Zhao, Yunhai Luo, Dajun Zhang, Xueliang Zhao, Jun Su, Zhenghua Chen, Shuo Liang, Guangxing

第一作者：李宇芳

通信作者：Zhao, YH[1];Liang, GX[1]

机构：[1]Guizhou Inst Technol, Coll Mat & Energy Engn, Guiyang 550003, Peoples R China;[2]Shenzhen Univ, Shenzhen Key Lab Adv Thin Films & Applicat, Key Lab Optoelect Devices & Syst, Coll Phys & Optoelect Engn,Minist Educ & Guangdong, Shenzhen 518060, Peoples R China

第一机构：贵州理工学院

通信机构：corresponding author), Shenzhen Univ, Shenzhen Key Lab Adv Thin Films & Applicat, Key Lab Optoelect Devices & Syst, Coll Phys & Optoelect Engn,Minist Educ & Guangdong, Shenzhen 518060, Peoples R China.

年份：2024

卷号：35

期号：11

外文期刊名：CHINESE CHEMICAL LETTERS

收录：;Scopus(收录号：2-s2.0-85200909562);WOS:【SCI-EXPANDED(收录号:WOS:001294366600001)】；

基金：This work was supported by the National Natural Science Foundation of China (No. 62074102), Science and Technology Plan Project of Shenzhen (No. 20220808165025003) China. Science and Technology Project of Guizhou Province (No. QKHJC-ZK [2023] YB130) , The Growth Plan for Young Science and Technology Talents of Guizhou Education Department (No. QJH KY [2017] 223) .

语种：英文

外文关键词：Kesterite; Solar cell; Chemical doping; Defect; Efficiency

摘要：The complicated and diverse deep defects, voids, and grain boundary in the CZTSSe absorber are the main reasons for carrier recombination and efficiency degradation. The further improvement of the open-circuit voltage and fill factor so as to increase the efficiency of CZTSSe device is urgent. In this work, we obtained K-doped CZTSSe absorber by a simple solution method. The medium-sized K atoms, which combine the advantages of light and heavy alkali metals, are able to enter the grain interior as well as segregate at grain boundary. The K-Se liquid phase can improve the absorber crystallinity. We find that the accumulation of the wide bandgap compound K2 Sn2 S5 at grain boundary can increase the contact potential difference of grain boundary, form more effective hole barriers, and enhance the charge separation ability. At the same time, K doping passivates the interface as well as bulk defects and suppresses the non-radiative recombination. The improved crystallinity, enhanced charge transport capability and reduced defect density due to K doping result in a significant enhancement of the carrier lifetime, leading to 13.04 % device efficiency. This study provides a new idea for simultaneous realization of grain boundary passivation and defect suppression in inorganic kesterite solar cells. (c) 2024 Published by Elsevier B.V. on behalf of Chinese Chemical Society and Institute of Materia Medica, Chinese Academy of Medical Sciences.