文献类型：期刊文献

英文题名：Negative Photoconductance Effect: An Extension Function of the TiOx-Based Memristor

作者：Zhou, Guangdong Sun, Bai Hu, Xiaofang Sun, Linfeng Zou, Zhuo Xiao, Bo Qiu, Wuke Wu, Bo Li, Jie Han, Juanjuan Liao, Liping Xu, Cunyun Xiao, Gang Xiao, Lihua Cheng, Jianbo Zheng, Shaohui Wang, Lidan Song, Qunliang Duan, Shukai

第一作者：Zhou, Guangdong

通信作者：Zhou, Guangdong

机构：[1] College of Artificial Intelligence, Brain-inspired Computing & Intelligent Control of Chongqing Key Lab, Southwest University, Chongqing, 400715, China; [2] School of Materials and Energy, Southwest University, Chongqing, 400715, China; [3] Guizhou Institute of Technology, Guiyang, 350003, China; [4] School of Physics and Electronic Science, Zunyi Normal University, Zunyi, 563006, China; [5] Department of Mechanics and Mechatronics Engineering, Centre for Advanced Materials Joining, Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, ON, N2L 3G1, Canada; [6] Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Korea, Republic of; [7] College of Chemistry and Chemical Engineering, Yantai University, Yantai, 264005, China

第一机构：College of Artificial Intelligence, Brain-inspired Computing & Intelligent Control of Chongqing Key Lab, Southwest University, Chongqing, 400715, China

通信机构：College of Artificial Intelligence, Brain-inspired Computing & Intelligent Control of Chongqing Key Lab, Southwest University, Chongqing, 400715, China;College of Artificial Intelligence, Brain-inspired Computing & Intelligent Control of Chongqing Key Lab, Southwest University, Chongqing, 400715, China;College of Artificial Intelligence, Brain-inspired Computing & Intelligent Control of Chongqing Key Lab, Southwest University, Chongqing, 400715, China;School of Materials and Energy, Southwest University, Chongqing, 400715, China;School of Physics and Electronic Science, Zunyi Normal University, Zunyi, 563006, China

年份：2021

卷号：8

期号：13

外文期刊名：Advanced Science

收录：EI(收录号：20211910314366);Scopus(收录号：2-s2.0-85105178396)

语种：英文

外文关键词：Digital storage - Memristors - Computer circuits - Nanocrystals - Graphene

摘要：The negative photoconductance (NPC) effect, defined as an increase in resistance upon exposure to illumination, holds great potential for application in photoelectric devices. A prepared memristor with the structure of Ag|graphene quantum dots (GQDs)|TiOx|F-doped SnO2 exhibits typical bipolar resistive switching (RS) memory behavior. The NPC effect is impressively observed in the high resistance state branch of the RS memory, enabling the memristor function to be extended to both memory logic display and multistate data storage. The observed NPC effect is attributed to the excitation, migration, and compensation of oxygen vacancy at the GQDs/TiOx interface, at which the electron transportation is efficiently restricted because of the variation in the charge distribution and electrostatic potential under illumination. Experiments, theoretical calculations, and physical models are used to provide engineer the interface with the aim of building the NPC effect in the memristive device. These results unveil a new horizon on extending the functionality of the memristor. ? 2021 The Authors. Advanced Science published by Wiley-VCH GmbH