文献类型：期刊文献

英文题名：Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture

作者：Zhou G. Sun B. Ren Z. Wang L. Xu C. Wu B. Li P. Yao Y. Duan S.

第一作者：Zhou G.

机构：[1]School of Science, Guizhou Institute of Technology, Guiyang, 55003, China;[2]School of Artificial Intelligence, Southwest University, Chongqing, 400715, China;[3]School of Physical Science and Technology, Southwest Jiaotong University, Chengdu, Sichuan, 610031, China;[4]School of Physics and Electronic Science, Zunyi Normal College, 563002, China

第一机构：贵州理工学院理学院

通信机构：School of Science, Guizhou Institute of Technology, Guiyang, 55003, China|贵州理工学院理学院;贵州理工学院;

年份：2019

卷号：55

期号：67

起止页码：9915-9918

外文期刊名：Chemical Communications

收录：Scopus(收录号：2-s2.0-85070821851)

语种：英文

摘要：A device with the lateral structure of AgMnOxAg was developed using a single MnOx nanorod. The device showed a typical resistor property under dry ambience, while it demonstrated the reversion between resistor and memristor under moisture ambience. Memory logic functions including logic gates and displays were feasible under the dual input of electric and moisture signals. ? 2019 The Royal Society of Chemistry.