文献类型：期刊文献

英文题名：Self-selective analogue FeOx-based memristor induced by the electron transport in the defect energy level

作者：Liao, Changrong Hu, Xiaofang Liu, Xiaoqin Sun, Bai Zhou, Guangdong

第一作者：Liao, Changrong

机构：[1] School of Electronic Information and Electrical Engineering, Chongqing University of Arts and Sciences, Chongqing, 402160, China; [2] College of Artificial Intelligence, Southwest University, Chongqing, 400715, China; [3] School of Science, Guizhou Institute of Technology, Guiyang, 550003, China; [4] Department of Mechanics and Mechatronics Engineering, University of Waterloo, Waterloo, Canada

第一机构：School of Electronic Information and Electrical Engineering, Chongqing University of Arts and Sciences, Chongqing, 402160, China

通信机构：College of Artificial Intelligence, Southwest University, Chongqing, 400715, China;Department of Mechanics and Mechatronics Engineering, University of Waterloo, Waterloo, Canada

年份：2022

卷号：121

期号：12

外文期刊名：Applied Physics Letters

收录：EI(收录号：20224012818859);Scopus(收录号：2-s2.0-85138799681)

语种：英文

外文关键词：Electron transport properties - Electron tunneling - Hematite

摘要：A Fe2O3 film homojunction was orderly prepared by magnetron sputtering and a hydrothermal method. The Fe2O3 homojunction-based memristor exhibits an obvious self-selective effect as well as a typical analogue resistive switching (RS) memory behavior. A desirable self-rectifying voltage range (-1 to 1 V), stable resistance ratio, good cycling endurance (>104 cycles), and long retention time (>104 s) can be obtained from the Fe2O3 homojunction-based memristor. Oxygen vacancies (Vo) are inevitably generated during the growth of the Fe2O3 film. The self-selective analogue RS memory behavior is ascribed to the electron tunneling behavior between the potential barrier generated by the FeOx contact and the electron filling dynamic in the Vo-based traps. This work provides a simple method to prepare a self-selective analogue memristor and lays the foundation for the core device of neuromorphic computing. ? 2022 Author(s).