文献类型：期刊文献

英文题名：Negative Photoconductance Effect: An Extension Function of the TiOx-Based Memristor

作者：Zhou, Guangdong Sun, Bai Hu, Xiaofang Sun, Linfeng Zou, Zhuo Xiao, Bo Qiu, Wuke Wu, Bo Li, Jie Han, Juanjuan Liao, Liping Xu, Cunyun Xiao, Gang Xiao, Lihua Cheng, Jianbo Zheng, Shaohui Wang, Lidan Song, Qunliang Duan, Shukai

第一作者：Zhou, Guangdong

通信作者：Zhou, GD[1];Wang, LD[1];Duan, SK[1];Zhou, GD[2];Song, QL[2];Zhou, GD[3];Zhou, GD[4];Wu, B[4]

机构：[1]Southwest Univ, Coll Artificial Intelligence, Brain Inspired Comp & Intelligent Control Chongqi, Chongqing 400715, Peoples R China;[2]Southwest Univ, Sch Mat & Energy, Chongqing 400715, Peoples R China;[3]Guizhou Inst Technol, Guiyang 350003, Peoples R China;[4]Zunyi Normal Univ, Sch Phys & Elect Sci, Zunyi 563006, Guizhou, Peoples R China;[5]Univ Waterloo, Waterloo Inst Nanotechnol, Ctr Adv Mat Joining, Dept Mech & Mechatron Engn, Waterloo, ON N2L 3G1, Canada;[6]Sungkyunkwan Univ, Dept Energy Sci, Suwon 16419, South Korea;[7]Yantai Univ, Coll Chem & Chem Engn, Yantai 264005, Peoples R China

第一机构：Southwest Univ, Coll Artificial Intelligence, Brain Inspired Comp & Intelligent Control Chongqi, Chongqing 400715, Peoples R China

通信机构：corresponding author), Southwest Univ, Coll Artificial Intelligence, Brain Inspired Comp & Intelligent Control Chongqi, Chongqing 400715, Peoples R China;corresponding author), Southwest Univ, Sch Mat & Energy, Chongqing 400715, Peoples R China;corresponding author), Guizhou Inst Technol, Guiyang 350003, Peoples R China;corresponding author), Zunyi Normal Univ, Sch Phys & Elect Sci, Zunyi 563006, Guizhou, Peoples R China.|贵州理工学院;

年份：2021

卷号：8

期号：13

外文期刊名：ADVANCED SCIENCE

收录：;WOS:【SCI-EXPANDED(收录号:WOS:000647901600001)】；

基金：G.D.Z. is especially grateful for funding from the Postdoctoral Program for the Innovative Talent Support of Chongqing (CQBX201806), Natural Science Foundation of Chongqing (No. cstc2020jcyj-msxmX0648), and Natural Science Foundation of Guizhou Province ([2020]1Y024). This work was also supported by the National Natural Science Foundation of China (Nos. 11774293, 51776046, 11704426, 61976246). The authors sincerely thank the experts Hongbin Zhao, Yanqing Yao, Jun Dong, Gaobo Xu, Jiayu You, Haiwei Liu, Jia Yan, Yue Zhou, Xiaoyan Fang, Xusheng Zhao, Jinggao Wu, Lijia Chen, Xiude Yang, and Ping Li for the important guidance on the language expression.

语种：英文

外文关键词：graphene quantum dots; memory logic display; negative photoconductance effect; TiOx‐ based memristor

摘要：The negative photoconductance (NPC) effect, defined as an increase in resistance upon exposure to illumination, holds great potential for application in photoelectric devices. A prepared memristor with the structure of Ag|graphene quantum dots (GQDs)|TiOx|F-doped SnO2 exhibits typical bipolar resistive switching (RS) memory behavior. The NPC effect is impressively observed in the high resistance state branch of the RS memory, enabling the memristor function to be extended to both memory logic display and multistate data storage. The observed NPC effect is attributed to the excitation, migration, and compensation of oxygen vacancy at the GQDs/TiOx interface, at which the electron transportation is efficiently restricted because of the variation in the charge distribution and electrostatic potential under illumination. Experiments, theoretical calculations, and physical models are used to provide engineer the interface with the aim of building the NPC effect in the memristive device. These results unveil a new horizon on extending the functionality of the memristor.