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Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture  ( SCI-EXPANDED收录)   被引量:32

文献类型:期刊文献

英文题名:Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture

作者:Zhou, Guangdong Sun, Bai Ren, Zhijun Wang, Lidan Xu, Cunyun Wu, Bo Li, Ping Yao, Yanqing Duan, Shukai

第一作者:周广东;Zhou, Guangdong

通信作者:Zhou, GD[1];Zhou, GD[2];Duan, S[2]

机构:[1]Guizhou Inst Technol, Sch Sci, Guiyang 55003, Guizhou, Peoples R China;[2]Southwest Univ, Sch Artificial Intelligence, Chongqing 400715, Peoples R China;[3]Southwest Jiaotong Univ, Sch Phys Sci & Technol, Chengdu 610031, Sichuan, Peoples R China;[4]Zunyi Normal Coll, Sch Phys & Elect Sci, Zunyi 563002, Peoples R China

第一机构:贵州理工学院理学院

通信机构:corresponding author), Guizhou Inst Technol, Sch Sci, Guiyang 55003, Guizhou, Peoples R China;corresponding author), Southwest Univ, Sch Artificial Intelligence, Chongqing 400715, Peoples R China.|贵州理工学院理学院;贵州理工学院;

年份:2019

卷号:55

期号:67

起止页码:9915-9918

外文期刊名:CHEMICAL COMMUNICATIONS

收录:;Scopus(收录号:2-s2.0-85070821851);WOS:【SCI-EXPANDED(收录号:WOS:000481528300029)】;

基金:The work was supported by Postdoctoral Program for Innovative Talent Support of Chongqing (CQBX201806).

语种:英文

摘要:A device with the lateral structure of Ag vertical bar MnOx vertical bar Ag was developed using a single MnOx nanorod. The device showed a typical resistor property under dry ambience, while it demonstrated the reversion between resistor and memristor under moisture ambience. Memory logic functions including logic gates and displays were feasible under the dual input of electric and moisture signals.

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