文献类型：期刊文献

英文题名：Solution-processable n-doped graphene-containing cathode interfacial materials for high-performance organic solar cells

作者：Pan, Fei Sun, Chenkai Li, Yingfen Tang, Dianyong Zou, Yingping Li, Xiaojun Bai, Song Wei, Xian Lv, Menglan Chen, Xiwen Li, Yongfang

第一作者：Pan, Fei;潘飞

通信作者：Lv, ML[1];Lv, ML[2];Li, YF[2];Li, YF[3]

机构：[1]Guizhou Inst Technol, Sch Chem Engn, Guiyang 550003, Guizhou, Peoples R China;[2]Chinese Acad Sci, Beijing Natl Lab Mol Sci, CAS Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R China;[3]Univ Chinese Acad Sci, Sch Chem Sci, Beijing 100049, Peoples R China;[4]Chongqing Univ Arts & Sci, Chongqing Engn Lab Targeted & Innovat Therapeut, Int Acad Targeted Therapeut & Innovat, Chongqing 402160, Peoples R China;[5]Cent S Univ, Coll Chem & Chem Engn, Changsha 410083, Hunan, Peoples R China;[6]Guangzhou Polyforte Chem Technol Co LTD, Guangzhou 510520, Guangdong, Peoples R China

第一机构：贵州理工学院化学工程学院

通信机构：corresponding author), Guizhou Inst Technol, Sch Chem Engn, Guiyang 550003, Guizhou, Peoples R China;corresponding author), Chinese Acad Sci, Beijing Natl Lab Mol Sci, CAS Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R China;corresponding author), Univ Chinese Acad Sci, Sch Chem Sci, Beijing 100049, Peoples R China.|贵州理工学院化学工程学院;贵州理工学院;

年份：2019

卷号：12

期号：11

起止页码：3400-3411

外文期刊名：ENERGY & ENVIRONMENTAL SCIENCE

收录：;EI(收录号：20194607685893);Scopus(收录号：2-s2.0-85074835798);WOS:【SCI-EXPANDED(收录号:WOS:000494816300011)】；

基金：The work was supported by the Natural Science Foundation of China (Grant No. 91633301, 51863002 and 51973042), High School Science and Technology Talent Support Project of Guizhou Province, China (Grant No. QJHKY [2017]082), Excellent young scientific and technological talents of Guizhou, China (Grant No. QKHPTRC [2019]5652). The authors would like to thank Dr Yuan Li from South China University of Technology, for the help in TVP and TVC measurements.

语种：英文

外文关键词：Cathodes - Cell engineering - Chemical vapor deposition - Cost engineering - Doping (additives) - Electron spin resonance spectroscopy - Graphene - Graphene devices - Heterojunctions - Organic light emitting diodes (OLED) - Perovskite - Perovskite solar cells - Photovoltaic cells - Photovoltaic effects - Solar power generation - Work function

摘要：Interface engineering is a critical factor in achieving high photovoltaic performances for large-area, printable, flexible and low cost organic solar cells (OSCs). Herein, we developed a solution-processable n-doped graphene cathode interfacial material (CIM) PDINO-G for OSCs by adding graphene to the classic material PDINO ((N,N-dimethyl-ammonium N-oxide)propyl perylene diimide). The dispersed graphene in PDINO-G was n-doped by the nitroxide radical of N-oxide in PDINO, which was certified by the ESR, Raman spectroscopy and XPS results. The n-doped PDINO-G CIM possessed increased conductivity, lower work function, reduced charge recombination and increased charge extraction rate. Previously, n-doped graphene was prepared only on the surface of chemical vapor-deposited (CVD) graphene films without solution processability. The effect of the CIM on the photovoltaic performance of OSCs was studied by selecting the photovoltaic model system of PTQ10 as the donor and IDIC-2F as the acceptor. The OSCs based on PTQ10:IDIC-2F with PDINO-G CIM demonstrated the best power conversion efficiency (PCE) of 13.01%, which was significantly enhanced in comparison with that of the devices without graphene modification on the PDINO CIM (12.23%). The universality of the high performance PDINO-G CIM was verified in two other photovoltaic systems based on PTQ10:IDIC and PM6:Y6. Especially, the single junction bulk heterojunction OSCs based on PM6:Y6 with PDINO-G CIM displayed a high PCE of 16.52% (average PCE of 16.3 +/- 0.2%). The results indicate that the n-doped PDINO-G is an excellent CIM for OSCs. Furthermore, this PDINO-doped graphene can be applied in other optoelectronic devices such as tandem OSCs, organic light-emitting diodes, and high-performance perovskite solar cells as a cathode interfacial material considering its advantages of solution processability, low work function and high conductivity.