文献类型：期刊文献

英文题名：A 60 GHz balun low-noise amplifier in 28-nm CMOS for millimeter-wave communication

作者：Guo, Benqing Chen, Hongpeng Wang, Xuebing Chen, Jun Xie, Xianbin Li, Yueyue

第一作者：Guo, Benqing

通信作者：Guo, BQ[1];Guo, BQ[2]

机构：[1]Univ Elect Sci & Technol China, Sch Informat & Commun Engn, 2006 Xiyuan Ave, Chengdu 611731, Sichuan, Peoples R China;[2]Chengdu Univ, Sch Informat Sci & Engn, Chengdu 610000, Sichuan, Peoples R China;[3]Guizhou Inst Technol, Dept Elect & Informat Engn, Guiyang 550003, Guizhou, Peoples R China

第一机构：Univ Elect Sci & Technol China, Sch Informat & Commun Engn, 2006 Xiyuan Ave, Chengdu 611731, Sichuan, Peoples R China

通信机构：corresponding author), Univ Elect Sci & Technol China, Sch Informat & Commun Engn, 2006 Xiyuan Ave, Chengdu 611731, Sichuan, Peoples R China;corresponding author), Chengdu Univ, Sch Informat Sci & Engn, Chengdu 610000, Sichuan, Peoples R China.

年份：2019

卷号：33

期号：32

外文期刊名：MODERN PHYSICS LETTERS B

收录：;Scopus(收录号：2-s2.0-85073875618);WOS:【SCI-EXPANDED(收录号:WOS:000498814600005)】；

基金：This work was supported by the National Natural Science Foundation of China (Nos. 61704022 and 61871073), and in part by the scholarship from China Scholarship Council (No. 201706075004).

语种：英文

外文关键词：Balun LNA; transformer; input-referred third-order intercept point; complementary metal-oxide-semiconductor; microwave integrated circuit; millimeter-wave application; slow-wave transmission lines

摘要：In this paper, a 60 GHz complementary metal-oxide-semiconductor (CMOS) balun low-noise amplifier (LNA) was implemented for millimeter-wave communication. To improve the gain and noise performance, slow-wave coplanar waveguides (S-CPW) with high quality factor were designed as input, output, and inter-stage matching networks. At the input port, a balun transformer provides additional passive gain while performing the singled-ended to differential conversion. Implemented in a 28-nm CMOS process, simulated results show that the proposed LNA exhibits a simulated linear gain of 16 dB and a noise figure of 5.6 dB at 60 GHz, with a 3-dB gain bandwidth of 5 GHz (58 GHz-63 GHz). The input return loss is better than -25 dB at the central frequency. The simulated input third-order intercept point (IIP3) is -5 dBm. The circuit draws 35 mA from 1 V supply voltage.