文献类型：期刊文献

英文题名：Sputtered and selenized Sb2Se3 thin-film solar cells with open-circuit voltage exceeding 500 mV

作者：Liang, Guang-Xing Luo, Yan-Di Chen, Shuo Tang, Rong Zheng, Zhuang-Hao Li, Xue-Jin Liu, Xin-Sheng Liu, Yi-Ke Li, Ying-Fen Chen, Xing-Ye Su, Zheng-Hua Zhang, Xiang-Hua Ma, Hong-Li Fan, Ping

第一作者：Liang, Guang-Xing

通信作者：Chen, Shuo

机构：[1] Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China; [2] School of Science and Engineering, The Chinese University of Hong Kong [Shenzhen], Shenzhen, 518060, China; [3] Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng, 475004, China; [4] School of Material and Metallurgical Engineering, Guizhou Institute of Technology, Guiyang, 550003, China; [5] Univ Rennes, CNRS, ISCR [Institut des Sciences Chimiques de Rennes] UMR 6226, Rennes, F-35000, France

第一机构：Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China

通信机构：Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China

年份：2020

卷号：73

外文期刊名：Nano Energy

收录：EI(收录号：20201708534612);Scopus(收录号：2-s2.0-85083549089)

语种：英文

外文关键词：Heterojunctions - Thin film circuits - Thin film solar cells - Thin films - Timing circuits - Crystal orientation - Interface states - Selenium compounds - Antimony compounds - Film thickness - Efficiency

摘要：Antimony selenide (Sb2Se3) is a potential absorber material for environment-friendly and cost-efficient photovoltaics and has achieved considerable progress in recent years. However, the severe open-circuit voltage (Voc) deficit ascribed to the interface and/or bulk defect states has become the main obstacle for further efficiency improvement. In this work, Sb2Se3 absorber layer was prepared by an effective combination reaction involving sputtered and selenized Sb precursor thin films. The self-assembled growth of Sb2Se3 thin films with large crystal grains, benign preferential orientation, and accurate chemical composition were successfully fulfilled under an appropriate thickness of Sb precursor and an optimized selenization scenario. Substrate structured Sb2Se3 thin-film solar cells, a champion device with a power-conversion efficiency of 6.84%, were fabricated. This device is comparable to state-of-the-art ones and represents the highest efficiency of sputtered Sb2Se3 solar cells. Importantly, the high Voc of 504 mV is closely related to the reduced deep level defect density for the Sb2Se3 absorber layer, the passivated interfacial defects for Sb2Se3/CdS heterojunction interface, and the additional heterojunction heat treatment-induced Cd and S inter-diffusion. This significantly improved Voc demonstrates remarkable potential to broaden its scope of applications for Sb2Se3 solar cells. ? 2020 Elsevier Ltd