文献类型：期刊文献

英文题名：Anti-Coking Performance of Ethyl Benzene Pyrolysis of Silicon-Based Films Prepared through Plasma-Enhanced Chemical Vapour Deposition

作者：Wang, Wei Tang, Anjiang Tang, Shiyun Wei, Deju Chen, Lijun

第一作者：Wang, Wei

通信作者：Tang, AJ[1];Tang, SY[1]

机构：[1]Guizhou Univ, Sch Chem & Chem Engn, Guiyang 550025, Peoples R China;[2]Guizhou Inst Technol, Sch Chem Engn, Guiyang 550003, Peoples R China

第一机构：Guizhou Univ, Sch Chem & Chem Engn, Guiyang 550025, Peoples R China

通信机构：corresponding author), Guizhou Inst Technol, Sch Chem Engn, Guiyang 550003, Peoples R China.|贵州理工学院化学工程学院;贵州理工学院;

年份：0

外文期刊名：SILICON

收录：;EI(收录号：20220211434029);Scopus(收录号：2-s2.0-85122243600);WOS:【SCI-EXPANDED(收录号:WOS:000737727800002)】；

基金：This work was supported by the National Natural Science Foundation of China (No. 21766005), the Science and Technology Planning Project of Guizhou Province (No. Qian Ke He Ping Tai Ren Cai [2019] 5609 and the GIT Academic Seedling Training and Innovation Exploration Project (No.GZLGXM-11).

语种：英文

外文关键词：PECVD; SiF4-H-2-Ar; Silicon-based films; Anti-coking performance; TPO-IR

摘要：Non-metal thin films have received considerable attention because they can shield Fe and Ni elements from metal catalytic coking. In this study, the SiF4-H-2-Ar mixture gas was used as the silicon source to deposit silicon-based films on 316 stainless steel wafer substrates through plasma-enhanced chemical vapour deposition (PECVD). The morphology, element composition, and crystalline fraction of the substrates were characterised through scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy. The optimal preparation temperature for surface silicon-based thin films was 300 degrees C (uniformly inlaid without cracks). Ethyl benzene was used at 700-900 degrees C (Delta T = 50 degrees C) and normal pressure to evaluate the performance of silicon-based thin films in inhibiting metal-catalytic coking. The temperature programmed oxidation-infrared absorption results showed that the coking inhibition rate of silicon-based thin films at T <= 800 degrees C was 70%, and when T > 800 degrees C, the coking inhibition rate decreases rapidly. The coke on the surface of the silicon-based films had a more lower degree of graphitization than that on the monocrystalline silicon(111) wafer and quartz wafer.