文献类型：期刊文献

英文题名：Theoretical study of stress and strain distribution in coupled pyramidal InAs quantum dots embedded in GaAs by finite element method

作者：Liu, XueFei Luo, ZiJiang Zhou, Xun Wei, JieMin Wang, Yi Guo, Xiang Lang, QiZhi Ding, Zhao

第一作者：Liu, XueFei

通信作者：Ding, Z[1];Ding, Z[2]

机构：[1]Guizhou Univ, Coll Big Data & Informat Engn, Key Lab Micronanoelect Guizhou Prov, Guiyang 550025, Guizhou, Peoples R China;[2]Minist Educ, Semicond Power Device Reliabil Engn Ctr, Guiyang 550025, Guizhou, Peoples R China;[3]Guizhou Normal Univ, Coll Phys & Elect Sci, Guiyang 550025, Guizhou, Peoples R China;[4]Guizhou Univ Finance & Econ, Coll Informat, Guiyang 550025, Guizhou, Peoples R China;[5]Guizhou Inst Technol, Guiyang 550002, Guizhou, Peoples R China

第一机构：Guizhou Univ, Coll Big Data & Informat Engn, Key Lab Micronanoelect Guizhou Prov, Guiyang 550025, Guizhou, Peoples R China

通信机构：corresponding author), Guizhou Univ, Coll Big Data & Informat Engn, Key Lab Micronanoelect Guizhou Prov, Guiyang 550025, Guizhou, Peoples R China;corresponding author), Minist Educ, Semicond Power Device Reliabil Engn Ctr, Guiyang 550025, Guizhou, Peoples R China.

年份：2019

卷号：92

期号：7

外文期刊名：EUROPEAN PHYSICAL JOURNAL B

收录：;EI(收录号：20192707125048);Scopus(收录号：2-s2.0-85068047763);WOS:【SCI-EXPANDED(收录号:WOS:000473206100002)】；

基金：This work is supported by the National Natural Science Foundation of China (Grant Nos. 61564002 and 11664005); Guizhou Normal University innovation and entrepreneurship education research center foundation. (Innovation and entrepreneurship education mode based on electronic design competition, 0418010.) Joint Foundation of Guizhou Normal University (Qian Ke He LH Zi [2017] No. 7341).

语种：英文

外文关键词：Mesoscopic and Nanoscale Systems

摘要：Stress and strain distributions in and around a single or two-coupled pyramidal InAs quantum dots (QDs) embedded in GaAs are calculated by finite element methods according to the continuum elasticity theory. By changing the quantum dot spacing and thickness of cap layer, the results about strain and stress distributions show compressive strain and stress distribution in the QDs and relaxation undergoes two stages with different speeds for different quantum dot height, quantum width and thickness of cap layer. The stress and strain distributions of pyramidal QDs would not vary monotonously with geometric dimensions. The height of quantum dot and cap layer thickness can effectively adjust the vertical correlation of self-assembly QDs according to the calculation. The shape of stress distribution at surface of cap layer can be tuned from a quadrangle into a circle by increasing the thickness of cap layer or decreasing the height of quantum dot. Also, a new approach to grow quantum ring is found in this paper. The calculations of two-coupled QDs show that the self-assembly technology might fail if the horizontal distance between two QDs is not large enough. The stress induced by upper QDs will be relaxed to zero with a longer distance downwards is found in this paper.