文献类型：期刊文献

英文题名：Visible light-induced resistive switching behaviors in single MnOx nanorod: Reversing between resistor and memristor

作者：Yang, Xiude Ren, Zhijun Pan, Fuyan Wu, Bo Li, Ping Zhou, Guangdong

第一作者：Yang, Xiude

通信作者：Zhou, GD[1]

机构：[1]Guizhou Inst Technol, Sch Sci, Guiyang 550003, Guizhou, Peoples R China;[2]Southwest Univ, Fac Mat & Energy, Chongqing 400715, Peoples R China;[3]Zunyi Normal Coll, Sch Phys & Elect Sci, Zunyi 563002, Peoples R China

第一机构：贵州理工学院理学院

通信机构：corresponding author), Guizhou Inst Technol, Sch Sci, Guiyang 550003, Guizhou, Peoples R China.|贵州理工学院理学院;贵州理工学院;

年份：2019

卷号：802

起止页码：546-552

外文期刊名：JOURNAL OF ALLOYS AND COMPOUNDS

收录：;WOS:【SCI-EXPANDED(收录号:WOS:000474567000062)】；

基金：We thank the Support Plan for Postdoctoral Innovative Talents of Chongqing (CQBX201806) for funding support. The National Natural Science Foundation of China (Grant No. 11704426), the Scientific Research Foundation of Guizhou Province (QKHJC[2016] 1162) and the Youth Science Foundation of Guizhou Province Education Ministry (QJHKY[2016] 253).

语种：英文

外文关键词：Resistive switching memory; Single MnOx nanorod; Visible light-induced; Chemisorbed Oxygen; Reversing between resistor and memristor

摘要：Ultralong MnOx nanorods are synthesized using hydrothermal method. Lateral device of Ag vertical bar MnOx vertical bar Ag is fabricated using single MnOx nanorod with length of similar to 20 mu m and diameter of similar to 120 nm. The device shows a typical resistor feature under dark, while it transfers from the resistor to a memristor under visible light. Our device gives evidence that the resistive switching (RS) memory behavior is feasible in microscale materials under visible light illumination. The RS behaviors are mainly dominated by the reaction, redistribution and migration of chemisorbed oxygen (O-Xa(ds)-) of the MnO x surface. This work provides an insight into the physical mechanism of memristive system as well as memristor-based photodetector application. (C) 2019 Published by Elsevier B.V.