文献类型：期刊文献

英文题名：Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory

作者：Zhou, Guangdong Yang, Xiude Xiao, Lihua Sun, Bai Zhou, Ankun

第一作者：Zhou, Guangdong;周广东

通信作者：Zhou, GD[1];Zhou, GD[2];Sun, B[3]

机构：[1]Guizhou Inst Technol, Sch Sci, Guiyang 550003, Guizhou, Peoples R China;[2]Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China;[3]Southwest Jiaotong Univ, Sch Phys Sci & Technol, Chengdu 610031, Sichuan, Peoples R China;[4]Chinese Acad Sci, Kunming Inst Bot, Kunming 650201, Yunnan, Peoples R China;[5]Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China

第一机构：贵州理工学院理学院

通信机构：corresponding author), Guizhou Inst Technol, Sch Sci, Guiyang 550003, Guizhou, Peoples R China;corresponding author), Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China;corresponding author), Southwest Jiaotong Univ, Sch Phys Sci & Technol, Chengdu 610031, Sichuan, Peoples R China.|贵州理工学院理学院;贵州理工学院;

年份：2019

卷号：114

期号：16

外文期刊名：APPLIED PHYSICS LETTERS

收录：;WOS:【SCI-EXPANDED(收录号:WOS:000466264600042)】；

基金：We thank the Support Plan for Postdoctoral Innovative Talents of Chongqing (CQBX201806) for funding support.

语种：英文

外文关键词：Grain boundaries - Hematite - Molecules - Oxygen - Oxygen vacancies - Redox reactions

摘要：A redox reaction submerged by a high current magnitude is impressively observed in a Fe2O3 solid electrolyte-based resistive memory device at room temperature. Oxygen vacancy migration, Ag atom redox, phase-induced grain boundary, and water molecule interplay with the oxygen vacancy are responsible for the submerged redox behaviors. The observation of the submerged redox behavior in the Fe2O3 phase change process gives an insight into the evolution of memristors. Published under license by AIP Publishing.