文献类型：期刊文献

英文题名：Defect-level trap optimization in Cu2ZnSn(S,Se)4 photovoltaic materials via Sb3+-doping for over 13% efficiency solar cells

作者：Li, Yingfen Chen, Xingye Wang, Runxi Zhou, Nian Huang, Fang Zhao, Jun Su, Zhenghua Chen, Shuo Liang, Guangxing

机构：[1] College of Materials and Energy Engineering, Guizhou Institute of Technology, Guiyang, 550003, China; [2] Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, China

第一机构：贵州理工学院

通信机构：Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, China;Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, China;Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, China

年份：2024

卷号：12

期号：17

起止页码：10260-10268

外文期刊名：Journal of Materials Chemistry A

收录：EI(收录号：20241916052997);Scopus(收录号：2-s2.0-85192252086)

语种：英文

外文关键词：Antimony - Antimony compounds - Efficiency - Grain growth - Heterojunctions - Semiconductor doping - Solar cells - Solar power generation

摘要：In this study, Sb2S3 was introduced into the two-step selenization process to promote bottom grain growth and reduce the surface roughness of the Cu2ZnSn(S,Se)4 light-absorber layer. The introduction of Sb doping in Cu2ZnSn(S,Se)4 can passivate bulk and interface defects and a small conduction band offset (CBO) can be found, which facilitate the improvement of heterojunction carrier transport properties. Similarly, simulations illustrated that Sb doping improved device efficiency by controlling bulk and interface defects and band alignment. This optimized method facilitated the penetration of Sb, resulting in a high-quality CZTSSe absorber layer. Ultimately, the research culminated in a significant enhancement, yielding a solar cell with an impressive efficiency of 13.11%. These findings offer new possibilities for kesterite solar cells and advance the potential of CZTSSe materials in thin film photovoltaic applications. ? 2024 The Royal Society of Chemistry.