文献类型：期刊文献

英文题名：Suppressing Deep-Level Trap Toward Over 13% Efficient Solution-Processed Kesterite Solar Cell

作者：Li, Yingfen Jian, Yue Huang, Fang Zhou, Nian Chai, Wanqiu Hu, Juguang Zhao, Jun Su, Zhenghua Chen, Shuo Liang, Guangxing

第一作者：李宇芳

通信作者：Jian, Y[1];Zhao, J[1];Liang, GX[1]

机构：[1]Guizhou Inst Technol, Coll Mat & Energy Engn, Guiyang 550003, Peoples R China;[2]Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Adv Thin Films & Applicat, Key Lab Optoelect Devices & Syst,Minist Educ & Gua, Shenzhen 518060, Guangdong, Peoples R China

第一机构：贵州理工学院

通信机构：corresponding author), Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Adv Thin Films & Applicat, Key Lab Optoelect Devices & Syst,Minist Educ & Gua, Shenzhen 518060, Guangdong, Peoples R China.

年份：2024

外文期刊名：SMALL

收录：;EI(收录号：20241615933944);Scopus(收录号：2-s2.0-85190386464);WOS:【SCI-EXPANDED(收录号:WOS:001203043800001)】；

基金：This work was supported by the National Natural Science Foundation of China (62074102), Science and Technology plan project of Shenzhen (20220808165025003, 20231122102326002) China. Science and Technology Project of Guizhou Province (No.QKHJC-ZK[2023]YB130), The Growth Plan for Young Science and Technology Talents of Guizhou Education Department (No. QJH KY[2017]223), The High-Level Talent Initial Funding of Guizhou Institute of Technology (No. XJGC20190624).

语种：英文

外文关键词：back interface engineering; Cu2ZnSn(S,Se)(4); defect; efficiency; solar cell

摘要：Cu2ZnSn (S,Se)(4) (CZTSSe), a promising absorption material for thin-film solar cells, still falls short of reaching the balance limit efficiency due to the presence of various defects and high defect concentration in the thin film. During the high-temperature selenization process of CZTSSe, the diffusion of various elements and chemical reactions significantly influence defect formation. In this study, a NaOH-Se intermediate layer introduced at the back interface can optimize Cu2ZnSnS4 (CZTS)precursor films and subsequently adjust the Se and alkali metal content to favor grain growth during selenization. Through this back interface engineering, issues such as non-uniform grain arrangement on the surface, voids in bulk regions, and poor contact at the back interface of absorber layers are effectively addressed. This method not only optimizes morphology but also suppresses deep-level defect formation, thereby promoting carrier transport at both interfaces and bulk regions of the absorber layer. Consequently, CZTSSe devices with a NaOH-Se intermediate layer improved fill factor, open-circuit voltage, and efficiency by 13.3%. This work initiates from precursor thin films via back interface engineering to fabricate high-quality absorber layers while advancing the understanding regarding the role played by intermediate layers at the back interface of kesterite solar cells.