文献类型：期刊文献

英文题名：Visible light-induced resistive switching behaviors in single MnOx nanorod: Reversing between resistor and memristor

作者：Yang, Xiude Ren, Zhijun Pan, Fuyan Wu, Bo Li, Ping Zhou, Guangdong

第一作者：Yang, Xiude

通信作者：Zhou, Guangdong|[14440ce882a616879f54e]周广东;

机构：[1] School of Science, Guizhou Institute of Technology, Guizhou, 550003, China; [2] Faculty of Materials and Energy, Southwest University, Chongqing, 400715, China; [3] School of Physics and Electronic science, Zunyi Normal College, Zunyi, 563002, China

第一机构：贵州理工学院理学院

通信机构：School of Science, Guizhou Institute of Technology, Guizhou, 550003, China|贵州理工学院理学院;贵州理工学院;

年份：2019

卷号：802

起止页码：546-552

外文期刊名：Journal of Alloys and Compounds

收录：EI(收录号：20192607091963);Scopus(收录号：2-s2.0-85067629153)

语种：英文

外文关键词：Chemisorption - Light - Memristors - Nanorods - Resistors - Silver compounds

摘要：Ultralong MnOx nanorods are synthesized using hydrothermal method. Lateral device of Ag|MnOx|Ag is fabricated using single MnOx nanorod with length of ～20 μm and diameter of ～120 nm. The device shows a typical resistor feature under dark, while it transfers from the resistor to a memristor under visible light. Our device gives evidence that the resistive switching (RS) memory behavior is feasible in microscale materials under visible light illumination. The RS behaviors are mainly dominated by the reaction, redistribution and migration of chemisorbed oxygen (Oxads?) of the MnOx surface. This work provides an insight into the physical mechanism of memristive system as well as memristor-based photodetector application. ? 2019