详细信息
Controlled Sputtering Pressure on High-Quality Sb2Se3 Thin Film for Substrate Configurated Solar Cells ( SCI-EXPANDED收录) 被引量:17
文献类型:期刊文献
英文题名:Controlled Sputtering Pressure on High-Quality Sb2Se3 Thin Film for Substrate Configurated Solar Cells
作者:Tang, Rong Chen, Xingye Luo, Yandi Chen, Zihang Liu, Yike Li, Yingfen Su, Zhenghua Zhang, Xianghua Fan, Ping Liang, Guangxing
第一作者:Tang, Rong
通信作者:Liang, GX[1]
机构:[1]Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Adv Thin Films & Applicat, Key Lab Optoelect Devices & Syst,Minist Educ & Gu, Shenzhen 518060, Peoples R China;[2]Guizhou Inst Technol, Sch Mat & Met Engn, Guiyang 550003, Peoples R China;[3]Univ Rennes, CNRS, UMR 6226, ISCR, F-35042 Rennes, France
第一机构:Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Adv Thin Films & Applicat, Key Lab Optoelect Devices & Syst,Minist Educ & Gu, Shenzhen 518060, Peoples R China
通信机构:corresponding author), Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Adv Thin Films & Applicat, Key Lab Optoelect Devices & Syst,Minist Educ & Gu, Shenzhen 518060, Peoples R China.
年份:2020
卷号:10
期号:3
外文期刊名:NANOMATERIALS
收录:;WOS:【SCI-EXPANDED(收录号:WOS:000526090400174)】;
基金:This work was supported by Science and Technology plan project of Shenzhen, China (JCYJ20190808153409238, Key Project of Department of Education of Guangdong Province, China (No. 2018KZDXM059); the Natural Science Foundation of Guizhou Province, China (Qian Ke He [2017]1064); National Natural Science Foundation of China, China (No. 61404086 and 51802050); the postgraduate innovation development fund project of Shenzhen University, China (PIDFP-ZR2019019); and Shenzhen Key Lab Fund (ZDSYS 20170228105421966).
语种:英文
外文关键词:thin film solar cell; Sb2Se3; magnetron sputtering; working pressure; post-selenization; substrate configuration
摘要:Magnetron sputtering has become an effective method in Sb2Se3 thin film photovoltaic. Research found that post-selenization treatments are essential to produce stoichiometric thin films with desired crystallinity and orientation for the sputtered Sb2Se3. However, the influence of the sputtering process on Sb2Se3 device performance has rarely been explored. In this work, the working pressure effect was thoroughly studied for the sputtered Sb2Se3 thin film solar cells. High-quality Sb2Se3 thin film was obtained when a bilayer structure was applied by sputtering the film at a high (1.5 Pa) and a low working pressure (1.0 Pa) subsequently. Such bilayer structure was found to be beneficial for both crystallization and preferred orientation of the Sb2Se3 thin film. Lastly, an interesting power conversion efficiency (PCE) of 5.5% was obtained for the champion device.
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