文献类型：期刊文献

英文题名：Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory

作者：Zhou, Guangdong Yang, Xiude Xiao, Lihua Sun, Bai Zhou, Ankun

第一作者：Zhou, Guangdong;周广东

机构：[1] School of Science, Guizhou Institute of Technology, Guiyang, 550003, China; [2] School of Physical Science and Technology, Southwest University, Chongqing, 400715, China; [3] School of Physical Science and Technology, Southwest Jiaotong University, Chengdu, Sichuan, 610031, China; [4] Kunming Institute of Botany, Chinese Academy Science, Kunming, 650201, China; [5] Department of Chemistry, Tsinghua University, Beijing, 100084, China

第一机构：贵州理工学院理学院

年份：2019

卷号：114

期号：16

外文期刊名：Applied Physics Letters

收录：EI(收录号：20191806860276);Scopus(收录号：2-s2.0-85064937746)

语种：英文

外文关键词：Oxygen - Oxygen vacancies - Hematite - Grain boundaries - Molecules - Redox reactions

摘要：A redox reaction submerged by a high current magnitude is impressively observed in a Fe2O3 solid electrolyte-based resistive memory device at room temperature. Oxygen vacancy migration, Ag atom redox, phase-induced grain boundary, and water molecule interplay with the oxygen vacancy are responsible for the submerged redox behaviors. The observation of the submerged redox behavior in the Fe2O3 phase change process gives an insight into the evolution of memristors. ? 2019 Author(s).