文献类型：期刊文献

英文题名：An effective combination reaction involved with sputtered and selenized Sb precursors for efficient Sb2Se3 thin film solar cells

作者：Luo, Yan-Di Tang, Rong Chen, Shuo Hu, Ju-Guang Liu, Yi-Ke Li, Ying-Fen Liu, Xin-Sheng Zheng, Zhuang-Hao Su, Zheng-Hua Ma, Xiu-Fang Fan, Ping Zhang, Xiang-Hua Ma, Hong-Li Chen, Zhi-Gang Liang, Guang-Xing

第一作者：Luo, Yan-Di

通信作者：Liang, Guang-Xing

机构：[1] Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China; [2] School of Material and Metallurgical Engineering, Guizhou Institute of Technology, Guiyang, 550003, China; [3] Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng, 475004, China; [4] Univ Rennes, CNRS, ISCR [Institut des Sciences Chimiques de Rennes] UMR6226, Rennes, F-35000, France; [5] Centre for Future Materials, University of Southern Queensland, Springfield Central, Brisbane, Queensland, 4300, Australia

第一机构：Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China

通信机构：Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China

年份：2020

卷号：393

外文期刊名：Chemical Engineering Journal

收录：EI(收录号：20201108292589);Scopus(收录号：2-s2.0-85081223968)

语种：英文

外文关键词：Copper compounds - IV-VI semiconductors - Selenium compounds - Gallium compounds - Selenium - Tin compounds - Zinc sulfide - Efficiency - Annealing - Heterojunctions - Layered semiconductors - Thin films - Thin film solar cells

摘要：Sputtering followed by post annealing is extensively used for fabrication of copper indium gallium selenide (CIGS), copper zinc tin sulfide (CZTS) and copper zinc tin sulfur selenide (CZTSSe) thin film solar cells. In this work, Sb2Se3 as an emerging alternative absorber was fabricated by an effective combination reaction of annealing sputtered Sb metallic precursors under Se vapor. Self-assembled growth of Sb2Se3 thin films consist of large grains that across the whole films have been successfully fulfilled via this combination reaction. Sb2Se3 thin films with desired orientation, stoichiometric composition and high-quality Sb2Se3/CdS heterojunction could be achieved once a proper selenization scenario was employed. Further, by selecting Sb films as precursors, the thickness of interfacial MoSe2 located at the back-contact region can be well controlled, leading to a significant enhancement in fill factor (FF) of the devices. This is in good accordance with our DFT simulation results which demonstrated Se vapor would be prone to react with the Sb lattice thermodynamically and thus limiting the thickness of the MoSe2 layer. Finally, a champion Sb2Se3 thin film solar cell with power conversion efficiency of 6.15% was achieved, which represents the highest efficiency of sputtered Sb2Se3 solar cells. ? 2020 Elsevier B.V.