文献类型：期刊文献

英文题名：Resistance switching characteristics of core-shell γ-Fe2O3/Ni2O3 nanoparticles in HfSiO matrix

作者：Zhou, Guangdong Wu, Bo Liu, Xiaoqin Li, Zhiling Zhang, Shuangju Zhou, Ankun Yang, Xiude

通信作者：Wu, Bo

机构：[1] Guizhou Institute of Technology, Guiyang, 550003, China; [2] Institute of Theoretical Physics, Zunyi Normal College, Zunyi, 563002, China; [3] School of Marine Science and Technology, Northwestern Polytechnical University, Xian, 710072, China; [4] Kunming Institute of Botany, Chineses Academy Sciences, Kunming, 650201, China

第一机构：贵州理工学院

年份：2016

卷号：678

起止页码：31-35

外文期刊名：Journal of Alloys and Compounds

收录：EI(收录号：20161602259099);Scopus(收录号：2-s2.0-84962907290)

基金：This work was partly supported by the National Natural Science Foundation of China ( 11304410 ), Natural Science Foundation of Technology Department ( QJHJZ-LKZS[2012]03 and QKHJZ[2014]2170 ) and Youth Science Foundation of Education Ministry ( QJHKZ[2012]084 ) of Guizhou Province of China.

语种：英文

外文关键词：Electric fields - Films - Hafnium compounds - Hematite - Nanoparticles - Nickel compounds - Oxygen - Oxygen vacancies - Precipitation (chemical) - Shells (structures) - Silicon compounds - Switching - Synthesis (chemical)

摘要：Core-shell γ-Fe2O3/Ni2O3 nanoparticles are synthesized by chemical co-precipitation method. Resistive switching memory behaviors, which have resistance ON/OFF ratio of ～102 and excellent retention property, are observed in the Au/HfSiO/γ-Fe2O3/Ni2O3/HfSiO/Pt structure. Space charge limited current (SCLC) mechanism, which is supported by the fitting current-voltage results, is employed to know the resistive switching memory effects. The transportation of Oxygen vacancy Vo2+, oxygen ion O2-, recombination of oxygen atom and drive of external electric field are responsible for the ON or OFF states observed in device. ? 2016 Elsevier B.V. All rights reserved.