成果/Result
- Self-selective analogue FeOx-based memristor induced by the electron transport in the defect energy level被引量:20收藏
- 作者:Liao, Changrong Hu, Xiaofang Liu, Xiaoqin Sun, Bai Zhou, Guangdong
- 机构:Chongqing Univ Arts & Sci;Southwest Univ;Guizhou Inst Technol;Univ Waterloo
- 来源:APPLIED PHYSICS LETTERS 2022
- 关键词:Electron transport properties - Electron tunneling - Hematite