成果/Result
- Self-selective analogue FeOx-based memristor induced by the electron transport in the defect energy level被引量：22收藏
- 作者：Liao, Changrong Hu, Xiaofang Liu, Xiaoqin Sun, Bai Zhou, Guangdong
- 机构：Chongqing Univ Arts & Sci;Southwest Univ;Guizhou Inst Technol;Univ Waterloo
- 来源：APPLIED PHYSICS LETTERS 2022
- 关键词：Electron transport properties - Electron tunneling - Hematite
