文献类型：期刊文献

英文题名：Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory

作者：Zhou, Guangdong Xiao, Lihua Zhang, Shuangju Wu, Bo Liu, Xiaoqin Zhou, Ankun

第一作者：Zhou, Guangdong

通信作者：Zhou, GD[1]

机构：[1]Guizhou Inst Technol, Guiyang 550003, Guizhou, Peoples R China;[2]Southwest Univ, ICEAM, Chongqing 400715, Peoples R China;[3]Chongqing Key Lab Adv Mat & Technol Clean Energy, Chongqing 400715, Peoples R China;[4]Zunyi Normal Coll, Inst Theoret Phys, Zunyi 563002, Peoples R China;[5]Chinese Acad Sci, China Kunming Inst Bot, Kunming 650201, Peoples R China

第一机构：贵州理工学院

通信机构：corresponding author), Guizhou Inst Technol, Guiyang 550003, Guizhou, Peoples R China.|贵州理工学院;

年份：2017

卷号：722

起止页码：753-759

外文期刊名：JOURNAL OF ALLOYS AND COMPOUNDS

收录：;WOS:【SCI-EXPANDED(收录号:WOS:000405520400097)】；

基金：This work was partly supported by the National Natural Science Foundation of China (11304410), Youth Science Foundation of Education Ministry (QJHKZ [2012] 084) of China.

语种：英文

外文关键词：Bilay NiOx/TiO2 films; Resistive switching memory; Migration of oxygen vacancy; Ag conduction filamens

摘要：Bilayer of NiOx/TiO2 thin film spin-coated and sputtering-deposited on the fluorine doped tin oxide (FTO) substrate is employed to develop a resistive random access memory device. An enhanced resistive switching (RS) behavior, which with appropriate resistance ratio of similar to 10(3), switching cycle endurance for 10(2) and long retention time for 10(4) s, is observed in the bilayer NiOx/TiO2 based device. Construction of contact-potential barrier, formation and rupture of a localized conduction filaments and migration of oxygen vacancy existed in the interface near electrodes co-contribute to the enhanced RS memory effects, but the migration of Ag+, Ni2x+ and diffusion of oxygen vacancies are the dominated ones. This work might give an insight into the mechanism of RS memory behaviors of an oxide-stacked structure device. (C) 2017 Published by Elsevier B.V.