- Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory被引量：46收藏
- 作者：Zhou, Guangdong Xiao, Lihua Zhang, Shuangju Wu, Bo Liu, Xiaoqin
- 机构： Guizhou Institute of Technology; Institute for Clean Energy & Advanced Materials ; Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy; Institute of Theoretical Physics; China Kunming Institute of Botany
- 来源：Journal of Alloys and Compounds 2017
- 关键词：Tin oxides - Random access storage - Silver - Nanocomposites - Switching
- Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory被引量：46收藏
- 作者：Zhou, Guangdong Xiao, Lihua Zhang, Shuangju Wu, Bo Liu, Xiaoqin
- 机构：Guizhou Inst Technol;Southwest Univ;Chongqing Key Lab Adv Mat & Technol Clean Energy;Zunyi Normal Coll;Chinese Acad Sci
- 来源：JOURNAL OF ALLOYS AND COMPOUNDS 2017
- 关键词：Bilay NiOx/TiO2 films Resistive switching memory Migration of oxygen vacancy Ag conduction filamens
- Resistance switching characteristics of core-shell γ-Fe2O3/Ni2O3 nanoparticles in HfSiO matrix被引量：36收藏
- 作者：Zhou, Guangdong Wu, Bo Liu, Xiaoqin Li, Zhiling Zhang, Shuangju
- 机构： Guizhou Institute of Technology; Institute of Theoretical Physics; School of Marine Science and Technology; Kunming Institute of Botany
- 来源：Journal of Alloys and Compounds 2016
- 关键词：Nickel compounds - Synthesis (chemical) - Shells (structures) - Switching - Films - Oxygen - RRAM - Electric fields - Nanoparticles - Oxygen vacancies - Precipitation (chemical)
- Resistance switching characteristics of coreeshell γ-Fe2O3/Ni2O3 nanoparticles in HfSiO matrix被引量：21收藏
- 作者：Zhou, Guangdong Wu, Bo Liu, Xiaoqin Li, Zhiling Zhang, Shuangju
- 机构：Guizhou Inst Technol;Zunyi Normal Coll;Northwestern Polytech Univ;Chineses Acad Sci
- 来源：JOURNAL OF ALLOYS AND COMPOUNDS 2016
- 关键词：High-k HfSiO films Resistance switching characteristics Resistance random access memory(RRAM) Core-shell materials
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