文献类型：期刊文献

英文题名：Resistance switching characteristics of coreeshell gamma-Fe2O3/Ni2O3 nanoparticles in HfSiO matrix

作者：Zhou, Guangdong Wu, Bo Liu, Xiaoqin Li, Zhiling Zhang, Shuangju Zhou, Ankun Yang, Xiude

通信作者：Wu, B[1]

机构：[1]Guizhou Inst Technol, Guiyang 550003, Peoples R China;[2]Zunyi Normal Coll, Inst Theoret Phys, Zunyi 563002, Peoples R China;[3]Northwestern Polytech Univ, Sch Marine Sci & Technol, Xian 710072, Peoples R China;[4]Chineses Acad Sci, Kunming Inst Bot, Kunming 650201, Peoples R China

第一机构：贵州理工学院

通信机构：corresponding author), Zunyi Normal Coll, Inst Theoret Phys, Zunyi 563002, Peoples R China.

年份：2016

卷号：678

起止页码：31-35

外文期刊名：JOURNAL OF ALLOYS AND COMPOUNDS

收录：;WOS:【SCI-EXPANDED(收录号:WOS:000376102400006)】；

基金：This work was partly supported by the National Natural Science Foundation of China (11304410), Natural Science Foundation of Technology Department (QJHJZ-LKZS[2012]03 and QKHJZ[2014]2170) and Youth Science Foundation of Education Ministry (QJHKZ[2012]084) of Guizhou Province of China.

语种：英文

外文关键词：High-k HfSiO films; Resistance switching characteristics; Resistance random access memory(RRAM); Core-shell materials

摘要：Coreeshell gamma-Fe2O3/Ni2O3 nanoparticles are synthesized by chemical co-precipitation method. Resistive switching memory behaviors, which have resistance ON/OFF ratio of similar to 10(2) and excellent retention property, are observed in the Au/HfSiO/gamma-Fe2O3/Ni2O3/HfSiO/Pt structure. Space charge limited current (SCLC) mechanism, which is supported by the fitting currentevoltage results, is employed to know the resistive switching memory effects. The transportation of Oxygen vacancy Vo(2+), oxygen ion O2+, recombination of oxygen atom and drive of external electric field are responsible for the ON or OFF states observed in device. (C) 2016 Elsevier B.V. All rights reserved.