成果/Result
- Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory被引量：34收藏
- 作者：Zhou, Guangdong Xiao, Lihua Zhang, Shuangju Wu, Bo Liu, Xiaoqin
- 机构：Guizhou Inst Technol;Southwest Univ;Chongqing Key Lab Adv Mat & Technol Clean Energy;Zunyi Normal Coll;Chinese Acad Sci
- 来源：JOURNAL OF ALLOYS AND COMPOUNDS 2017
- 关键词：Bilay NiOx/TiO2 films Resistive switching memory Migration of oxygen vacancy Ag conduction filamens
- Resistance switching characteristics of core-shell γ-Fe2O3/Ni2O3 nanoparticles in HfSiO matrix被引量：0收藏
- 作者：Zhou, Guangdong Wu, Bo Liu, Xiaoqin Li, Zhiling Zhang, Shuangju
- 机构： Guizhou Institute of Technology; Institute of Theoretical Physics; School of Marine Science and Technology; Kunming Institute of Botany
- 来源：Journal of Alloys and Compounds 2016
- 关键词：Electric fields - Films - Hafnium compounds - Hematite - Nanoparticles - Nickel compounds - Oxygen - Oxygen vacancies - Precipitation (chemical) - Shells (structures) - Silicon compounds - Switching - Synthesis (chemical)
