成果/Result
- Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory被引量：42收藏
- 作者：Zhou, Guangdong Xiao, Lihua Zhang, Shuangju Wu, Bo Liu, Xiaoqin
- 机构：Guizhou Inst Technol;Southwest Univ;Chongqing Key Lab Adv Mat & Technol Clean Energy;Zunyi Normal Coll;Chinese Acad Sci
- 来源：JOURNAL OF ALLOYS AND COMPOUNDS 2017
- 关键词：Bilay NiOx/TiO2 films Resistive switching memory Migration of oxygen vacancy Ag conduction filamens
- Resistance switching characteristics of coreeshell gamma-Fe2O3/Ni2O3 nanoparticles in HfSiO matrix被引量：18收藏
- 作者：Zhou, Guangdong Wu, Bo Liu, Xiaoqin Li, Zhiling Zhang, Shuangju
- 机构：Guizhou Inst Technol;Zunyi Normal Coll;Northwestern Polytech Univ;Chineses Acad Sci
- 来源：JOURNAL OF ALLOYS AND COMPOUNDS 2016
- 关键词：High-k HfSiO films Resistance switching characteristics Resistance random access memory(RRAM) Core-shell materials
- Self-selective analogue FeOx-based memristor induced by the electron transport in the defect energy level被引量：17收藏
- 作者：Liao, Changrong Hu, Xiaofang Liu, Xiaoqin Sun, Bai Zhou, Guangdong
- 机构：Chongqing Univ Arts & Sci;Southwest Univ;Guizhou Inst Technol;Univ Waterloo
- 来源：APPLIED PHYSICS LETTERS 2022
- 关键词：Electron transport properties - Electron tunneling - Hematite
